NCERT Solutions class-12 physics Electronic Devices

NCERT Solutions class-12 physics Electronic Devices Class 12 Physics book solutions are available in PDF format for free download. These ncert book chapter wise questions and answers are very helpful for CBSE board exam. CBSE recommends NCERT books and most of the questions in CBSE exam are asked from NCERT text books. Class 12 Physics chapter wise NCERT solution for Physics part 1 and Physics part 2 for all the chapters can be downloaded from our website and myCBSEguide mobile app for free.

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NCERT Class 12 Physics Chapter-wise Solutions

• 1 – Electric Charges and Fields
• 2 – Electrostatic Potential and Capacitance
• 3 – Current Electricity
• 4 – Moving Charges and Magnetism
• 5 – Magnetism and Matter
• 6 – Electromagnetic Induction
• 7 – Alternating Current
• 8 – Electromagnetic Waves
• 9 – Ray Optics and Optical Instruments
• 10 – Wave Optics
• 11 – Dual Nature of Radiation and Matter
• 12 – Atoms
• 13 – Nuclei
• 14 – Semiconductor Electronic: Material, Devices and Simple Circuits
• 15 – Communication Systems

CHAPTER 14 SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

• 14.1 Introduction
• 14.2 Classification of Metals, Conductors and Semiconductors
• 14.3 Intrinsic Semiconductor
• 14.4 Extrinsic Semiconductor
• 14.5 p-n Junction
• 14.6 Semiconductor diode
• 14.7 Application of Junction Diode as a Rectifier
• 14.8 Special Purpose p-n Junction Diodes
• 14.9 Junction Transistor
• 14.10 Digital Electronics and Logic Gates
• 14.11 Integrated Circuits

NCERT Solutions class-12 physics Electronic Devices

 1: In an n-type silicon, which of the following statement is true:

(a) Electrons are majority carriers and trivalent atoms are the dopants.

(b) Electrons are minority carriers and pentavalent atoms are the dopants.

(c) Holes are minority carriers and pentavalent atoms are the dopants.

(d) Holes are majority carriers and trivalent atoms are the dopants.

2: Which of the statements given in Exercise 14.1 is true for p-type semiconductors.

3: Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to Which of the following statements is true?

4: In an unbiased p-n junction, holes diffuse from the p-region to n-region because

(a) free electrons in the n-region attract them.

(b) they move across the junction by the potential difference.

(c) hole concentration in p-region is more as compared to n-region.

(d) All the above.

5: When a forward bias is applied to a p-n junction, it

(a) raises the potential barrier.

(b) reduces the majority carrier current to zero.

(c) lowers the potential barrier.

(d) None of the above.

6: For transistor action, which of the following statements are correct:

(a) Base, emitter and collector regions should have similar size and doping concentrations.

(b) The base region must be very thin and lightly doped.

(c) The emitter junction is forward biased and collector junction is reverse biased.

(d) Both the emitter junction as well as the collector junction are forward biased.

7:  For a transistor amplifier, the voltage gain

(a) remains constant for all frequencies.

(b) is high at high and low frequencies and constant in the middle frequency range.

(c) is low at high and low frequencies and constant at mid frequencies.

(d) None of the above.

8: In half-wave rectification, what is the output frequency if the input frequency is 50 Hz. What is the output frequency of a full-wave rectifier for the same input frequency.

9: For a CE-transistor amplifier, the audio signal voltage across the collected resistance of 2 is 2 V. Suppose the current amplification factor of the transistor is 100, find the input signal voltage and base current, if the base resistance is 1.

10: Two amplifiers are connected one after the other in series (cascaded). The first amplifier has a voltage gain of 10 and the second has a voltage gain of 20. If the input signal is 0.01 volt, calculate the output ac signal.

11: A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

12: The number of silicon atoms per. This is doped simultaneously with  atoms per of Arsenic and atoms of Indium. Calculate the number of electrons and holes. Given that. Is the material n-type or p-type?

13: In an intrinsic semiconductor the energy gap is 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration is given by , where is a constant.

14: In a p-n junction diode, the current I can be expressed as

where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k Bis the Boltzmann constant ) and T is the absolute temperature. If for a given diode and T = 300 K, then

(a) What will be the forward current at a forward voltage of 0.6 V?

(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?

15:  You are given the two circuits as shown in Fig. 14.44. Show that circuit (a) acts as OR gate while the circuit (b) acts as AND gate.

16: Write the truth table for a NAND gate connected as given in Fig. 14.45.

Hence identify the exact logic operation carried out by this circuit.

17:  You are given two circuits as shown in Fig. 14.46, which consist of NAND gates. Identify the logic operation carried out by the two circuits.

18 :     Write the truth table for circuit given in Fig. 14.47 below consisting of NOR gates and identify the logic operation (OR, AND, NOT) which this circuit is performing.

(Hint: A = 0, B = 1 then A and B inputs of second NOR gate will be 0 and hence Y=1. Similarly work out the values of Y for other combinations of A and B. Compare with the truth table of OR, AND, NOT gates and find the correct one.)

19: Write the truth table for the circuits given in Fig. 14.48 consisting of NOR gates only. Identify the logic operations (OR, AND, NOT) performed by the two circuits.

NCERT Solutions for Class 12 Physics

NCERT Solutions Class 12 Physics PDF (Download) Free from myCBSEguide app and myCBSEguide website. Ncert solution class 12 physics includes text book solutions from both part 1 and part 2. NCERT Solutions for CBSE Class 12 Physics have total 20 chapters. 12 Physics NCERT Solutions in PDF for free Download on our website. Ncert physics class 12 solutions PDF and physics ncert class 12 PDF solutions with latest modifications and as per the latest CBSE syllabus are only available in myCBSEguide

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