Why are element dopant for silicon …

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Posted by Abhishek Sah 5 years, 10 months ago
- 2 answers
Tamanna Sharma 5 years, 10 months ago
In order to make ptype and ntype semiconductor means to create donor site and acceptor site in the valance shell, reason -the basic reason to use these groups is the dopant energy level within the bandgap ,for a particular temperature these dopant 100% activate according to the relation : K/t =1/V×eta here K is boltzman constant , t is temperature in Kelvin, V is thermal voltage, eta is ideality factor. But why at high diode current eta is 1 for both Ge and Si ,that's also my query if you know about this ,then please tell me.
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Mahi D 5 years, 10 months ago
2Thank You